MRAM is short for magnetoresistive random-access memory, which is a jot down of non-volatile random-access memory.
What Is MRAM?
Definition
What is MRAM?
It is the abbreviation of magnetoresistiverandom-access memory, a pop in ofnon-volatile random-access memorythat stores data in magnetic domains.
One of the plates is a permanent magnet set to a specific polarity.
The magnetization of another plate can be changed to match the external magnetic field to store the memory.
This configuration is called a magnetic tunnel junction and is the simplest structure of MRAM bits.
The simplest way to read is to measure the electrical resistance of the cell.
This increases production, which is directly related to cost.
On the contrary, MRAM does not need to be refreshed.
Data Retention
MRAM is usually touted as non-volatile memory.
In particular, the critical (minimum) write current is proportional to the thermal stability factor .
The retention force is directly proportional to exp().
Therefore, the retention rate decreases exponentially as the write current decreases.
Since transistors have very low power requirements, their switching time is very short.
Although MRAM is not as fast as SRAM, even so, it is interesting enough.
How to make this trade-off in the future remains to be seen.
